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簡(jiǎn)要描述:黑砷磷/晶體黑磷-砷合金 BP-As alloy (Black Phosphorus-Arsenic Alloy)晶體尺寸:~mm電學(xué)性能:半導(dǎo)體晶體結(jié)構(gòu):斜方晶系晶胞參數(shù):晶胞參數(shù)取決于合金中的成分。p/As比值為1a = b = 0.338 nm, b = 10.743 nm, c = 0.446 nm, α = β = γ = 90°晶體類型:合成晶體純度:>99.995%
詳細(xì)介紹
黑砷磷/晶體黑磷-砷合金 BP-As alloy (Black Phosphorus-Arsenic Alloy)
晶體尺寸:~mm
電學(xué)性能:半導(dǎo)體
晶體結(jié)構(gòu):斜方晶系
晶胞參數(shù):晶胞參數(shù)取決于合金中的成分。p/As比值為1
a = b = 0.338 nm, b = 10.743 nm, c = 0.446 nm, α = β = γ = 90°
晶體類型:合成
晶體純度:>99.995%
Powder X-ray diffraction (XRD) of a single crystal P-As. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal P-As by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal P-As. Measurement was performed with a 785 nm Raman system at room temperature.
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